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50 μ m PI copper plated film · Industrial grade bending resistant FPC substrate
In the design of FPC flexible circuit boards, substrate thickness has never been a parameter that can be arbitrarily determined. Engineers often face two conflicting demands: equipment requires FPC to be "thin enough" to fit into narrow spaces, while also requiring FPC to be "strong enough" to withstand repeated bending without failure.
For FPC applications that require high frequency and large angle bending, such as the hinge area of foldable phones, dynamic connections in robotic arm joints, and repeated opening and closing mechanisms in car cabins, the fatigue resistance of the substrate directly determines the service life of the entire product. In this engineering dimension, thickness is not an enemy, but a friend.
Engineering cognition:Research has shown that PI substrates with a thickness of 50 μ m or 38 μ m have significant advantages in terms of resistance to bending and compression damage. In FPC designs that require protection against folding damage, the industry generally recommends using PI with a thickness of 50 μ m or 38 μ m as the substrate. The standard FPC substrate thickness includes specifications such as 12.5 μ m, 25 μ m, and 50 μ m, with 50 μ m being positioned as the standard thickness for industrial grade bending resistance.50 μ m PI copper plated filmIt is on the basis of this engineering cognition that the product is formed by endowing the thick PI substrate with conductive function through vacuum sputtering copper plating process.
In the thickness spectrum of FPC substrates, different thicknesses correspond to different engineering positions:
The reason why 50 μ m has become the standard choice for flexural applications is due to its unique mechanical advantages:
Dynamic bending compromise, thick substrate provides stronger mechanical support, and more strain is borne by the substrate, reducing the risk of copper layer fatigue fracture.
Large heat capacity and high rigidity, with small dimensional changes and higher accuracy in high-temperature processes such as welding and bonding.
In connectors that are frequently plugged or subjected to force, 50 μ m substrates effectively resist tearing and delamination, while traditional 25 μ m connectors are prone to tearing.
To provide sufficient support for a thicker copper layer, which means lower resistance and higher current carrying capacity.
The copper layer of 50 μ m PI copper plated film was prepared using roll to roll (R2R) vacuum magnetron sputtering process. In a vacuum environment, high-purity oxygen free copper targets are bombarded by high-energy particles, and copper atoms are sputtered and deposited on the surface of PI thin films, forming a uniform and dense copper layer.
Compared to thin substrates, 50 μ m substrates have significant process advantages in vacuum sputtering copper plating technology:
Large heat capacity, less prone to shrinkage and warping, and good process stability.
High mechanical strength, not easily stretched or deformed, wide process window, and high yield.
The substrate is flat and stable, runs smoothly, and has excellent deposition uniformity.
Advanced Institute of Technology:By adopting a roll to roll continuous production process, efficient, continuous, and uniform deposition of metal layers can be achieved on various flexible film surfaces such as PI, PET, PEN, etc., with substrate thickness covering 7.5-125 μ m.
Based on a 50 μ m PI substrate, copper plated film products with different copper layer thicknesses can be prepared by precise control of process parameters. The thickness of the copper layer varies from 5 μ m to 18 μ m, and different thicknesses correspond to different performance focuses:
| Product Type | Copper layer thickness | Key Features | Typical Applications |
|---|---|---|---|
| 50 5PI copper plated film | ~5 μm | Moderate copper layer, good flexibility and balanced conductivity | Flexible FPC signal line, conventional EMI shielding |
| 50 10PI copper plated film | ~10 μm | Thick copper layer, low resistance, good current carrying capacity | High current FPC circuits, automotive electronic connectors |
| 50 12PI copper plated film | ~12 μm | Thick copper layer, extremely low resistance, high current carrying capacity | Power line, power FPC, industrial control |
| 50 18PI copper plated film | ~18 μm | Ultra thick copper layer, extremely low square resistance, high reliability | High power transmission, battery connection, aerospace |
Note: The thickness of the copper layer is the nominal reference value, and the specific performance is subject to the actual product specifications. The thickness of the copper layer can be customized, usually ranging from 2-18 μ m.
Selection suggestion:Based on the comprehensive balance of current carrying capacity, bending life, and etching accuracy. The thinner the copper layer, the better the flexibility and the higher the precision of the thin circuit; The thicker the copper layer, the stronger the conductivity and higher the current carrying capacity.
Long term -200 ° C~300 ° C, thick substrate has a large heat capacity, and high-temperature processes are more stable. The thermal stability of advanced institute technology products reaches 260 ° C.
Non adhesive 2-Layer FCCL structure, with a coating adhesion of 5B grade (ASTM D3359 highest grade).
Excellent dimensional stability, not easily deformed during processing and use.
Highly flexible, high heat resistance, excellent peel strength, and excellent uniformity of the copper layer.
Fine lines with a spacing of 50 μ m (25 μ m line width/line spacing) can be achieved on a 50 μ m PI. The copper layer thickness of 2-9 μ m is suitable for the production of thin circuits (Pitch<30 μ m). <>
Core applications. Folding screen hinge, sliding cover cable, and dynamic connection of mechanical arm joints, with a recommended thickness of 50 μ m or 38 μ m in the industry.
Tg ≥ 280 ° C, certified by AEC-Q200 automotive standards, suitable for high temperature, vibration resistance, and high reliability scenarios.
Thick copper (10-18 μ m) combined with 50 μ m substrate, suitable for BMS and power module connections, replacing traditional wire harnesses.
High reliability industrial control, medical equipment, high mechanical strength, long service life.
PI is resistant to high temperatures (250-280 ° C), radiation, and chemical corrosion, and is widely used in the aerospace industry.
50 5PI is suitable for signals; 50 10/12PI is suitable for power supply; 50 18PI is suitable for high power.
The 50 μ m substrate itself has excellent bending resistance and better fatigue resistance than the thinner copper layer (5 μ m).
Thin copper layer (5 μ m) is suitable for high-precision thin circuits; Thick copper layer (18 μ m) has a long etching time and is suitable for wide linewidth power lines.
Automotive electronics require AEC-Q200 certification; Advanced Institute Technology products have passed the vehicle specification certification.
The 50 μ m substrate process is mature and supports customization of substrate thickness ranging from 5-125 μ m and copper layer thickness ranging from 0.5-50 μ m, with adjustable width.
The essence of 50 μ m PI copper plated film is an engineering trade-off between the flexibility and reliability of FPC. It is not pursuing 'extreme thinness', but pursuing' sufficient strength '- exchanging thicker PI substrates for higher flexural life, better dimensional stability, and stronger current carrying capacity. In engineering scenarios that require FPC to withstand repeated bending, high currents, or harsh environments, 50 μ m provides reliability guarantees that are difficult to replace with 12.5 μ m and 25 μ m.
For FPC design engineers, understanding the engineering logic behind the thickness of 50 μ m - requiring thicker substrates for resistance to bending and compression, thicker copper layers for high currents, and stronger "skeletons" for high reliability - is more valuable than simply comparing thickness values. On this thickness platform, customizing products with different properties by adjusting the thickness of the copper layer (from 5 μ m to 18 μ m) is a key step in transforming "thick substrates" into specific engineering solutions.
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