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Selection of ultra-thin FPC and COF substrates with 7 μ m PI copper plated film
In the design of flexible printed circuit boards (FPCs), substrate thickness is always a key constraint - it determines the lower limit of bending radius, the upper limit of wiring density, and the utilization efficiency of internal space of the device. When the PI substrate was thinned from the traditional 25 μ m and 12.5 μ m to 7 μ m, a critical engineering boundary was breached.
What is the concept of 7 μ m? As a reference, the thickness of a standard A4 paper is about 70-100 μ m, and a 7 μ m PI substrate is only about one tenth the thickness of the paper. At this scale, the flexibility of PI film has reached a new height - the bending radius can be as small as sub millimeter level, providing unprecedented design freedom for extreme space limited scenarios such as wiring in the hinge area of foldable screen phones and soft board connections for micro camera modules.
Core Values:The 7 μ m PI substrate pushes the bending radius to the sub millimeter level, providing unprecedented degrees of freedom for FPC design with extreme space constraints.
Thinning polyimide film to 7 μ m is not simply about "thinning" the material. The reason why PI can still maintain its engineering value at this extreme thickness is due to its inherent material properties:
It is precisely these intrinsic properties that are preserved at a thickness of 7 μ m that make ultra-thin PI copper plated films the substrate choice for high reliability flexible circuits.
The copper layer of the 7 μ m PI copper plated film was prepared using roll to roll (R2R) vacuum magnetron sputtering process. In a highly vacuum environment (usually below 1 × 10 ⁻ ³ Pa), high-purity oxygen free copper targets are bombarded with high-energy ions to sputter copper atoms, which are accurately deposited on the surface of PI thin films under the action of electric and magnetic fields, gradually forming a uniform and dense copper film.
Vacuum sputtering copper plating on 7 μ m ultra-thin substrates faces a series of unique technical challenges:
7 μ m PI has extremely low thermal capacity and requires precise cooling and power control to prevent shrinkage, warping, or melting.
The mechanical strength of ultra-thin substrates is limited, and precision tension systems are the core threshold for mass production.
Dynamic basement membrane transmission combined with closed-loop feedback, with a film thickness deviation of ≤± 2%.
Copper atoms form chemical bonds with the surface of PI, with an adhesion level of 5B (the highest level in ASTM D3359).
Based on a 7 μ m PI substrate, copper plated film products with different copper layer thicknesses can be prepared by precisely controlling the sputtering process parameters. The thickness of the copper layer varies from 0.1 μ m to 1 μ m, and different thicknesses correspond to different performance focuses:
| Product Type | Copper layer thickness | Key Features | Typical Applications |
|---|---|---|---|
| 7 0.1PI copper plated film | ~0.1 μm | Extremely thin copper layer, highest flexibility, semi transparent | High density FPC thin lines, sensor electrodes, optical transparent circuits |
| 7 0.3PI copper plated film | ~0.3 μm | Thin copper layer, good flexibility, moderate conductivity | COF substrate, fine pitch FPC, wearable device connection |
| 7 0.7PI copper plated film | ~0.7 μm | Medium copper layer, with balanced conductivity and flexibility | FPC signal line, electromagnetic shielding layer, flexible connection |
| 7 1PI copper plated film | ~1 μm | Thick copper layer, low square resistance, high conductivity | High current FPC circuit, high-frequency signal transmission, electromagnetic shielding |
Note: The thickness of the copper layer is the nominal reference value, and the specific performance is subject to the actual product specifications. Advanced Institute Technology's copper layer thickness covers 0.5-50 μ m and supports customization.
Selection suggestion:The thinner the copper layer, the better the flexibility, and it is suitable for the production of high-precision thin circuits; The thicker the copper layer, the stronger the conductivity and higher the current carrying capacity. Based on the comprehensive consideration of line accuracy, current carrying capacity, and bending life.
7 μ m PI substrate, supporting specifications such as 7.5/12.5/25/50/100 μ m, with advanced technology thickness range of 5-125 μ m.
Grade 5B (ASTM D3359 highest grade), interface bonding strength ≥ 25N/mm.
Ten bends without cracks; 100000 dynamic bending of copper layer without detachment.
PI substrate -269 ° C~400 ° C, thermal stability after copper plating at 260 ° C; copper layer purity ≥ 99.99%.
15% better than the industry average level; Ra ≤ 50nm mirror treatment reduces signal loss by 40% compared to traditional products.
Vehicle certification:It has passed AEC-Q200 certification and is widely used in fields such as power lithium battery FPC and car camera modules.
Ultra thin substrate achieves sub millimeter bending radius, thin line (Pitch<30 μ m) production, foldable screen hinge cable, and micro camera module connection. <>
The chip is directly mounted on a flexible substrate, with a 7 μ m substrate providing the necessary flexibility and dimensional stability.
The ultra-thin shielding layer adheres to narrow spaces, and the purity of the copper layer is ≥ 99.99%, ensuring reliable shielding effectiveness.
Wide temperature range stability (-269 ° C~400 ° C), capable of withstanding high temperature reflow soldering processes, suitable for automotive electronics and industrial control.
0.1-0.3 μ m is suitable for high-precision fine lines; 0.7-1 μ m is suitable for current carrying signal lines.
For dynamic bending applications (folding screens), a 0.1-0.3 μ m thin copper layer is preferred to reduce fatigue cracks.
Choose a copper layer with a thickness of 0.7-1 μ m for the power circuit to reduce square resistance and improve current carrying capacity.
Support roll to roll continuous production, copper layer thickness 0.5-50 μ m, width 0.5-500mm full-size customization.
The essence of 7 μ m PI copper plating film is an engineering product that combines the extreme thinning of PI thin film with precision copper plating process. It is not simply "thinning" - at the 7 μ m scale, the thermal management, tension control, coating uniformity, and adhesion of materials are facing new engineering boundaries. It is precisely these boundary conditions that have been overcome one by one - achieving copper layer purity of over 99.99%, film thickness deviation within ± 2%, and 5B level adhesion through vacuum sputtering technology - that enable the 7 μ m PI copper plated film to move from the laboratory to mass production, becoming a reliable material option for high-density FPC, COF substrates, and flexible electronic devices.
For FPC design engineers, understanding the process constraints and performance opportunities behind the thickness of 7 μ m - why it is 7 μ m instead of thinner, and how to choose the thickness of the copper layer - is more valuable than simply remembering a specification.
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